1 MRF18090BR3 mrf18090bsr3 motorola rf device data the rf mosfet line rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for gsm and edge base station applications with frequencies from 1.9 to 2.0 ghz. suitable for fm, tdma , cdma and multicarrier amplifier applications. to be used in class ab for gsm and edge cellular radio applications. ? gsm and edge performances, full frequency band power gain ? 13.5 db (typ) @ 90 watts (cw) efficiency ? 45% (typ) @ 90 watts (cw) ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 90 watts (cw) output power ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain - source voltage v dss 65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 250 1.43 watts w/ c storage temperature range t stg - 65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 0.7 c/w esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by mrf18090b/d motorola semiconductor technical data MRF18090BR3 mrf18090bsr3 1.90 - 1.99 ghz, 90 w, 26 v lateral n - channel rf power mosfets case 465b - 03, style 1 ni - 880 MRF18090BR3 case 465c - 02, style 1 ni - 880s mrf18090bsr3 ? motorola, inc. 2004 rev 5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF18090BR3 mrf18090bsr3 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain - source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate quiescent voltage (v ds = 26 vdc, i d = 750 madc) v gs(q) 2.5 3.7 4.5 vdc drain - source on - voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.1 ? vdc forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs ? 7.2 ? s dynamic characteristics reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 4.2 ? pf functional tests (in motorola test fixture) common - source amplifier power gain @ 90 w (1) (v dd = 26 vdc, i dq = 750 ma, f = 1930 - 1990 mhz) g ps 12 13.5 ? db drain efficiency @ 90 w (1) (v dd = 26 vdc, i dq = 750 ma, f = 1930 - 1990 mhz) 40 45 ? % input return loss (1) (v dd = 26 vdc, p out = 90 w cw, i dq = 750 ma, f = 1930 - 1990 mhz) irl ? ? -10 db output mismatch stress (v dd = 26 vdc, p out = 90 w cw, i dq = 750 ma vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) to meet application requirements, motorola test fixtures have been designed to cover the full gsm1900 band, ensuring batch - to - batch consistency. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
3 MRF18090BR3 mrf18090bsr3 motorola rf device data c1 1.0 f chip capacitor (0805) c2 1.0 nf chip capacitor (0805) c3, c4 6.8 pf, 100b chip capacitors c5 220 f, 50 v electrolytic capacitor c6, c7 12 pf, 100b chip capacitors r1 2.2 k chip resistor (0805) r2, r3, r6 1.0 k chip resistors (0805) r4 10 k ? chip resistor (0805) r5 6.8 k ? chip resistor (0805) t1 bc847 sot - 23 z1 0.85 x 0.09 microstrip z2 printed inductance z3 printed inductance (butterfly) z4 0.70 x 0.09 microstrip z5 0.36 x 0.09 microstrip z6 0.21 x 1.25 microstrip z7 0.45 x 1.18 microstrip z8 1.37 x 0.05 microstrip z9 0.39 x 0.09 microstrip z10 1.25 x 0.09 microstrip pcb teflon ? glass figure 1. 1.93 - 1.99 mhz test fixture schematic figure 2. 1.93 - 1.99 ghz test fixture component layout rf input rf output z1 v gg c6 c7 c1 z6 dut v dd z7 z9 z2 z10 r5 c2 r6 c5 c3 + z4 r1 t1 z8 c4 r2 r3 r4 z3 z5 r1 ground t1 r4 r5 r6 c6 c3 c7 ground c2 c4 r3 c1 mrf18090b r2 v bias v supply c5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF18090BR3 mrf18090bsr3 4 motorola rf device data figure 3. 1.93 - 1.99 ghz demo board schematic c2 v ground c1 r2 r1 r4 r6 t1 r3 t2 c8 c10 c9 r5 c6 c7 c5 c4 c3 mrf18090b supply ?? ?? ?? ?? ? ? ? ? ?? ?? ? ? ?? ?? ? ? ?? ?? ?? ?? ? ? ? ? ? ? ? ? mrf18090b c5 v supply c3 c1 r1 r2 r6 t1 r3 r4 z3 ??? ??? ??? t2 c7 z2 rf input rf output z1 c8 z4 + c1, c3 1 f chip capacitors (0805) c2 0.1 f chip capacitor (0805) c4 1 nf chip capacitor (0805) c5 220 f, 50 v electrolytic capacitor c6, c7 8.2 pf, 100a chip capacitors c8, c9, c10 22 pf, 100a chip capacitors r1 10 ? chip resistor (0805) r2, r3 1 k ? chip resistors (0805) r4 2.2 k ? chip resistor (0805) r5 10 k ? chip resistor (0603) r6 5 k ? , smd potentiometer t1 lp2951 micro - 8 voltage regulator t2 bc847 sot - 23 npn transistor z1 0.491 x 0.110 microstrip z2 0.756 x 1.260 microstrip z3 1.433 x 1.260 microstrip z4 0.567 x 0.110 microstrip substrate = 0.5 mm teflon ? glass r5 c2 c4 c6 c10 c9 figure 4. 1.93 - 1.99 ghz demo board component layout f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5 MRF18090BR3 mrf18090bsr3 motorola rf device data typical characteristics irl 1 w p in = 5 w figure 5. power gain versus output power p out , output power (watts) 10 figure 6. output power versus supply voltage 0 v dd , supply voltage (volts) 140 40 g ps , power gain (db) 12 1 p figure 7. output power versus frequency 120 f, frequency (ghz) 0 figure 8. output power and efficiency versus input power p in , input power (watts) 20 1.91 0 15 1 120 20 20 2.01 60 1000 32 22 40 0 2 1.93 figure 9. wideband gain and irl (at small signal) 16 f, frequency (ghz) 6 1.88 10 2.02 14 1.92 1.90 1.94 10 13 16 14 750 ma 500 ma 300 ma i dq = 1000 ma 26 1.95 3456 60 50 40 10 0 v dd = 26 vdc f = 1990 mhz 11 12 28 20 24 80 , output power (watts) out 2 w p in = 5 w i dq = 750 ma f = 1990 mhz p , output power (watts) out 1.97 1.99 60 80 100 v dd = 26 vdc i dq = 750 ma 1 w 2 w 40 60 80 p , output power (watts) out 20 30 p out v dd = 26 vdc i dq = 750 ma f = 1990 mhz 12 g ps , power gain (db) 0 ?15 ?25 ?20 ?5 ?10 v dd = 26 vdc i dq = 750 ma g ps 8 irl, input return loss (db) 0.1 100 30 18 16 14 100 120 100 1.98 1.96 2.00 2.04 , drain efficiency (%) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF18090BR3 mrf18090bsr3 6 motorola rf device data v dd = 26 v, i dq = 750 ma, p out = 90 watts (cw) figure 10. large signal input and output impedance f = 1805 mhz f = 1990 mhz z o = 10 ? f = 1805 mhz f = 1990 mhz f mhz z source ? z load ? 1805 1880 1930 1.10 - j5.85 2.05 - j8.00 1.56 - j6.75 1.15 - j2.16 1.13 - j2.60 1.30 - j2.23 1990 2.30 - j7.30 0.82 - j2.90 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network z source z load f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7 MRF18090BR3 mrf18090bsr3 motorola rf device data package dimensions case 465b - 03 issue c ni - 880 MRF18090BR3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. 4. recommended bolt center dimension of 1.16 (29.57) based on m3 screw. dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.535 0.545 13.6 13.8 c 0.147 0.200 3.73 5.08 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.175 0.205 4.44 5.21 n 0.871 0.889 19.30 22.60 q .118 .138 3.00 3.51 r 0.515 0.525 13.10 13.30 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h f q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) s m a m aaa b m t (insulator) r m a m ccc b m t (lid) s 0.515 0.525 13.10 13.30 m 0.872 0.888 22.15 22.55 aaa 0.007 ref 0.178 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref 4 case 465c - 02 issue a ni - 880s mrf18090bsr3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.905 0.915 22.99 23.24 b 0.535 0.545 13.60 13.80 c 0.147 0.200 3.73 5.08 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.871 0.889 19.30 22.60 r 0.515 0.525 13.10 13.30 style 1: pin 1. drain 2. gate 3. source 1 seating plane 2 d k c e h f m a m bbb b m t b b (flange) m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator) s 0.515 0.525 13.10 13.30 m 0.872 0.888 22.15 22.55 bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.007 ref 0.178 ref f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF18090BR3 mrf18090bsr3 8 motorola rf device data information in this document is provided solely to enable system and software implementers to use motorola products. there are no express or i mplied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in th is document. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?t ypical? parameters that may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical impl ant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer s hall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent and t rademark office. all other product or service names are the proper ty of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. motorola inc. 2004 how to reach us: usa / europe / locations not listed : japan : motorola japan ltd.; sps, technical information center, motorola literature distribution 3 - 20 - 1, minami - azabu, minato - ku, tokyo 106 - 8573, japan p.o. box 5405, denver, colorado 80217 81-3- 3440 - 3569 1 - 800 - 521 - 6274 or 480 - 768 - 2130 asia / pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industria l estate, tai po, n.t., hong kong 852 - 26668334 home page : http://motorola.com/semiconductors mrf18090b/d ? f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
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